| 摘要 |
PROBLEM TO BE SOLVED: To detect hydrogen gas at least up to a LEL concentration level, to provide excellent linearity in a gas sensitivity curve, to hardly generate lowering of sensitivity, to provide excellent resistance against a poisoning gas, and to substantially eliminate any influence on humidity change. SOLUTION: In this semiconductor type hydrogen gas detecting element Rs having a sensitive layer 2 provided to contact freely with detected gas, and formed using a metal oxide semiconductor comprising an indium oxide particle as a main component and having a noble metal wire 1 coated with the sensitive layer 2, and formed with a hydrogen-permselective silica thin film 3 on a surface of the layer 2, manganese oxide and cerium oxide are added to the sensitive layer 2, and an addition ratio of the both oxides is within 1.2-3.0at% with respect to the sensitive layer 2. COPYRIGHT: (C)2004,JPO
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