INDIUM-CONTAINING WAFER AND METHOD FOR PRODUCTION THEREOF

摘要

An indium-containing wafer, characterized in that it has a layer for removing mercury which comprises an additional compound semiconductor and is formed on the outermost surface thereof for the purpose of removing the mercury attached on the surface of the layer; a method for producing an indium-containing wafer, characterized in that it comprises attaching mercury on the surface of the layer for removing mercury, evaluating electric characteristics of said wafer by using the mercury as an electrode, and then removing said layer for removing mercury, to thereby remove the mercury attached on the surface of the layer. The indium-containing wafer allows the insured removal of the above mercury, resulting in the application of the mercury C-V method which is used for measuring characteristics of an indium-containing wafer with high precision and also is a nondestructive test.