发明名称 |
METHOD FOR TREATING THE SURFACE OF A SEMICONDUCTOR MATERIAL |
摘要 |
<p>A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.</p> |
申请公布号 |
EP1383944(A1) |
申请公布日期 |
2004.01.28 |
申请号 |
EP20020730364 |
申请日期 |
2002.04.17 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DERYCKE, VINCENT;SOUKIASSIAN, PATRICK |
分类号 |
H01L21/322;C30B33/00;H01L21/04;H01L21/285;(IPC1-7):C30B29/36;H01L21/02 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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