| 发明名称 |
USE OF PERFLUOROKETONES AS VAPOR REACTOR CLEANING, ETCHING, AND DOPING GASES |
| 摘要 |
<p>Methods of using reactive gases containing a perfluoroketone having 4 to 7 carbon atoms for removing unwanted deposits that build up in a vapor reactor, for etching dielectric and metallic materials in a vapor reactor, and for doping a material in a vapor reactor are described. The perfluoroketones perform as well as or better than the standard perfluorocarbons used in the semiconductor industry but have minimal impact on global warming.</p> |
| 申请公布号 |
EP1383939(A1) |
申请公布日期 |
2004.01.28 |
| 申请号 |
EP20020717614 |
申请日期 |
2002.03.14 |
| 申请人 |
3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
KESARI, SUSRUT;BEHR, FREDERICK E.;COSTELLO, MICHAEL G.;FLYNN, RICHARD M.;MINDAY, RICHARD M.;OWENS, JOHN G.;VITCAK, DANIEL R. |
| 分类号 |
C09K13/08;C23C14/00;C23C16/44;C23F4/00;H01L21/304;H01L21/3065;H01L21/31;H01L21/311;H01L21/3213;(IPC1-7):C23C16/44;H01L21/316;C23C14/56 |
主分类号 |
C09K13/08 |
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