发明名称 Resist pattern thickening material, resist pattern and process for forming the same, and process for manufacturing a semiconductor device
摘要 The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern. The resist pattern thickening material contains: a resin; a crosslinking agent; and at least one type selected from cationic surfactants, amphoteric surfactants, and non-ionic surfactants selected from alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants, and ethylene diamine surfactants. In a process for forming a resist pattern of the present invention, after a resist pattern is formed, the thickening material is applied onto a surface of the pattern. A process for manufacturing a semiconductor device of the present invention includes: after forming a resist pattern on an underlying layer, applying the thickening material on a surface of the pattern so as to thicken the pattern; and a step of patterning the underlying layer by etching by using the pattern. <IMAGE>
申请公布号 EP1385059(A1) 申请公布日期 2004.01.28
申请号 EP20030016967 申请日期 2003.07.25
申请人 FUJITSU LIMITED 发明人 NOZAKI, KOJI;KOZAWA, MIWA
分类号 G03F7/00;G03F7/40;G11B5/17;G11B5/31;H01L21/02;H01L21/027;H01L21/3065;H01L21/8242;H01L21/8247;H01L27/105 主分类号 G03F7/00
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