发明名称 Semiconductor light emitting device
摘要 <p>A light emitting apparatus has: a light emitting element of nitride semiconductor; a phosphor that absorbs light emitted from the light emitting element and emits light with a wavelength different from that of the absorbed light; a first reflection mirror that reflects the light emitted from the light emitting element to converge the light; a second reflection mirror that has a light passing hole at a position on which the light reflected on the first reflection mirror is converged and that has a reflection surface on the side opposite to the side facing the first reflection mirror; and a phosphor layer that includes the phosphor, the phosphor layer being placed over the light passing hole and at a specific region in transparent resin that part of light passing through the light passing hole is radiated. <IMAGE></p>
申请公布号 EP1385216(A2) 申请公布日期 2004.01.28
申请号 EP20030016882 申请日期 2003.07.24
申请人 TOYODA GOSEI CO., LTD. 发明人 UEMURA, TOSHIYA
分类号 H01L33/06;H01L33/30;H01L33/36;H01L33/48;H01L33/50;H01L33/56;H01L33/58;H01L33/60;H01L33/62;(IPC1-7):H01L33/00 主分类号 H01L33/06
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