发明名称 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
摘要 |
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdown voltage. The semiconductor device includes a semiconductive substrate region, through which a current flows in the ON-state of the device and that is depleted in the OFF-state. The semiconductive substrate region includes a plurality of vertical alignments of n-type buried regions 32 and a plurality of vertical alignments of p-type buried regions. The vertically aligned n-type buried regions and the vertically aligned p-type buried regions are alternately arranged horizontally. The n-type buried regions and p-type buried regions are formed by diffusing respective impurities into highly resistive n-type layers 32a laminated one by one epitaxially.
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申请公布号 |
US6683347(B1) |
申请公布日期 |
2004.01.27 |
申请号 |
US19990348915 |
申请日期 |
1999.07.07 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
FUJIHIRA TATSUHIKO |
分类号 |
H01L21/331;H01L21/336;H01L29/06;H01L29/739;H01L29/78;H01L29/861;H01L29/872;(IPC1-7):H01L29/76;H01L21/00 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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