发明名称 |
Thin-film opto-electronic device and a method of making it |
摘要 |
The present invention is related to a thin-film opto-electronic device and a method of fabricating the same. Particularly this thin film opto-electronic device is fabricated on a Si-containing substrate. The thin-film material is a crystalline semiconductor material. In order to increase the efficiency of this device a porous silicon layer is applied between the thin-film and the substrate. This porous silicon layer has both light reflecting and light diffusing properties thereby giving rise to light confinement in the thin-film.
|
申请公布号 |
US6683367(B1) |
申请公布日期 |
2004.01.27 |
申请号 |
US20010743076 |
申请日期 |
2001.04.09 |
申请人 |
IMEC VZW |
发明人 |
STALMANS LIEVEN;POORTMANS JEF;CAYMAX MATTY;SAID KHALID;NIJS JOHAN |
分类号 |
H01L21/00;H01L29/06;H01L31/028;H01L31/052;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|