发明名称 |
Method of forming small contact holes using alternative phase shift masks and negative photoresist |
摘要 |
A phase shifting mask set and method of using the phase shifting mask set to pattern a layer of negative photoresist. The mask set comprises a first phase shifting mask and a second phase shifting mask. The first and second phase shifting masks have regions of 90° phase shift and -90° phase shift in the contact hole regions of the masks. In the second phase shift mask the phase shift regions are rotated 90° spatially with respect to the phase shift regions of the first phase shift mask. A layer of negative photoresist is exposed with the first and second phase shift masks and developed to form the photoresist pattern used to form contact holes.
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申请公布号 |
US6682858(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20010946987 |
申请日期 |
2001.09.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN HUA-TAI |
分类号 |
G03F1/00;G03F7/20;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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