METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to shorten an interval of process time, minimize particles and avoid a defect on a BPSG(boron phosphorous silicate glass) layer by forming an interlayer dielectric and the BPSG layer on a silicon substrate in the same reaction furnace and by forming a thin oxide layer on the BPSG layer. CONSTITUTION: An interlayer dielectric(6) is formed on a silicon substrate(1) having a predetermined process in a reaction furnace. Plenty of TMP(tetra-methyl-phosphorus) gas and TMB(tetra-methyl-boron) gas is injected into the reaction furnace to perform the first deposition process. A small amount of TMP gas and TMB gas is injected to perform the second deposition process so that a BPSG layer(7) is formed on the interlayer dielectric. An oxide layer(8) as a protection layer of the BPSG is formed on the BPSG layer in the reaction furnace by a thickness of several tens of angstrom.