| 摘要 |
An MRAM construction can include an MRAM device between a pair of substantially orthogonal conductive lines, with one of the substantially orthogonal conductive lines being configured to induce Hx within the device, and the other being configured to induce Hy within the device. A first pulse of current is passed along a first of the two conductive lines while passing at least two sequential pulses of current along a second of the two conductive lines. The sequential pulses include a pulse along a first direction of the second of the two conductive lines, and a pulse along a second direction opposite to the first direction.
|
