| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of simplifying manufacturing processes, minimizing the generation of defect at a P well, and improving the stabilization of operation characteristics. CONSTITUTION: A P well(3) is formed at the predetermined portion of a silicon substrate(1), a sacrificial oxide layer(4) is formed at the upper portion of the silicon substrate. After implanting inert ions into the silicon substrate, an ion implantation layer(5) is formed at the lower portion of the P well by carrying out a heat treatment. A triple N well(6) is formed at the lower portion of the ion implantation layer by sequentially carrying out an N type ion implantation and an RTA(Rapid Thermal Annealing) process. After removing the sacrificial oxide layer, a tunnel oxide layer, a polysilicon layer, and a pad nitride layer are sequentially formed at the upper portion of the resultant structure.
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