METHOD FOR MANUFACTURING MOS TRANSISTOR

摘要

PURPOSE: A method for manufacturing an MOS transistor is provided to prevent loss of an oxide layer and to restrain out-diffusion by forming a screen oxide layer on a silicon substrate. CONSTITUTION: A well(2) of triple structure is formed in a silicon substrate(1). An isolation layer(4) is formed at a desired region of the substrate. A screen oxide layer(5) is formed by depositing dense DSC(SiH2Cl2) including N2 radicals on the silicon substrate. Then, dopants for controlling threshold voltage are implanted into the substrate and annealed, thereby forming an ion-implanted layer(6).