| 摘要 |
PURPOSE: A semiconductor memory device performing a partial array self refresh is provided to reduce a refresh current. CONSTITUTION: A plurality of latch units(LAT0-LAT15) divide a memory area into a plurality of parts using one or more than one upper address bit of a memory address, and determine whether to refresh each part by being matched to each part. A decoder(11) outputs a latch selection signal selecting a corresponding latch unit by decoding the upper address bit. An initialization unit(12) outputs an initialization signal resetting the above latch unit using one or more than one lower address bit of the memory address. A command analyser(13) generates a corresponding operation signal by analyzing an external command inputted from an external command pin. And a command pass unit(14) determines a refresh operation of a corresponding area according to a state of the latch unit corresponding to the upper address bit.
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