| 摘要 |
PURPOSE: A method for etching a metal line is provided to be capable of preventing the lateral etching phenomenon of aluminum for restraining the fall-down of the metal line. CONSTITUTION: An IMO(Inter-Metal Oxide) layer(3), a barrier metal(5), an aluminum layer(7), and an anti-reflective coating(9) are sequentially formed at the upper portion of a semiconductor substrate(1). A photoresist pattern(20) is formed at the predetermined upper portion of the anti-reflective coating. A metal line having a positive lateral profile, is formed by carrying out a dry etching process at the resultant structure using the photoresist pattern as an etching mask. At this time, the dry etching process is carried out in a dry etching chamber by supplying dry etching gas such as C12, BC13, and N2 while applying a power of 400-600 Watt at the temperature of 70 °C, or higher, and at the pressure of 250 mTorr, or higher. Then, the photoresist pattern is removed.
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