| 摘要 |
PURPOSE: A method for trimming a reference voltage of a flash memory cell and a trimming apparatus thereof are provided to generate a desired voltage level with a chip itself without a program of an additional equipment by determining a trim bit according to a reference voltage level in the flash memory cell. CONSTITUTION: According to the method, the first voltage(VCCREF) is generated. The first voltage is compared with the second voltage(VREF), and then an analog signal(VOUT) as much as the difference of voltage is output. States of trim bits are determined according to the above analog signal. And the third voltage in the same level as the first voltage level is generated by programming trim bit or a flash cell according to the state of the determined trim bits.
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