CIRCUIT FOR GENERATING COLUMN SELECTION CONTROL SIGNAL OF MEMORY DEVICE

摘要

PURPOSE: A circuit for generating a column selection control signal of a memory device is provided to generate a column control(Yi Control) signal operating n a page write mode corresponding to a page read mode. CONSTITUTION: A column selection signal control block(10) generates a column selection control signal for general operation of the first cycle of a page mode. A latch(500) sets and outputs the column selection control signal from the column selection signal control block. A read reset block(50) resets the above latch. A page read column selection control signal enable block(90) generates a column selection control signal according as a page address is changed when operating in a page read mode and then sets it to the above latch. And a page read reset block(60) resets the above latch set by the above page read column selection control signal enable block.