| 摘要 |
PURPOSE: An internal power supply voltage generation circuit is provided to generate a stable internal power supply source during operation of all DRAM cells by using a CMOS swing driving part and an analog driving part selectively according to a level of a power supply voltage. CONSTITUTION: A power supply voltage level detection part(20) detects a level of a power supply voltage and outputs a high power supply voltage detection signal. A logic part(30) performs a logic operation of the high power supply voltage level detection signal and an active operation signal inputted in an active state, and then outputs a CMOS enable signal and an analog enable signal selectively according to the state of level detection signal at the high power supply in an active state. A CMOS swing driving part(40) supplies an internal power supply voltage by being driven according to the above CMOS enable signal. And an analog driving part(50) is driven according to the analog enable signal and supplies an internal power supply voltage.
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