发明名称 |
CLEANING LIQUID FOR REMOVING RESIST AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A cleaning liquid for removing resist and a manufacturing method for a semiconductor device using the cleaning liquid are provided to enhance removing function of resist residual dross and resistance against corrosion of a copper film and an insulator film. CONSTITUTION: A cleaning liquid for removing a resist contains salt of hydrofluoric acid and base which does not contain metal, a water-soluble organic solvent, one or more acid, and water. The acid is one selected from a group consisting of organic acid and inorganic acid. Hydrogen ion concentration(pH) of the cleaning liquid is 4 to 8. Preferably, the cleaning liquid contains additionally ammonium salt.
|
申请公布号 |
KR20040007331(A) |
申请公布日期 |
2004.01.24 |
申请号 |
KR20030047193 |
申请日期 |
2003.07.11 |
申请人 |
EKC TECHNOLOGY K.K.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;RENESAS TECHNOLOGY CORP. |
发明人 |
KANNO ITARU;ASAOKA YASUHIRO;HIGASHI MASAHIKO;HIDAKA YOSHIHARU;KISHIO ETSURO;AOYAMA TETSUO;SUZUKI TOMOKO;HIRAGA TOSHITAKA;NAGAI TOSHIHIKO |
分类号 |
C11D7/08;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D11/00;G03F7/42;H01L21/02;H01L21/311;(IPC1-7):H01L21/304 |
主分类号 |
C11D7/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|