发明名称 CLEANING LIQUID FOR REMOVING RESIST AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE: A cleaning liquid for removing resist and a manufacturing method for a semiconductor device using the cleaning liquid are provided to enhance removing function of resist residual dross and resistance against corrosion of a copper film and an insulator film. CONSTITUTION: A cleaning liquid for removing a resist contains salt of hydrofluoric acid and base which does not contain metal, a water-soluble organic solvent, one or more acid, and water. The acid is one selected from a group consisting of organic acid and inorganic acid. Hydrogen ion concentration(pH) of the cleaning liquid is 4 to 8. Preferably, the cleaning liquid contains additionally ammonium salt.
申请公布号 KR20040007331(A) 申请公布日期 2004.01.24
申请号 KR20030047193 申请日期 2003.07.11
申请人 EKC TECHNOLOGY K.K.;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;RENESAS TECHNOLOGY CORP. 发明人 KANNO ITARU;ASAOKA YASUHIRO;HIGASHI MASAHIKO;HIDAKA YOSHIHARU;KISHIO ETSURO;AOYAMA TETSUO;SUZUKI TOMOKO;HIRAGA TOSHITAKA;NAGAI TOSHIHIKO
分类号 C11D7/08;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D11/00;G03F7/42;H01L21/02;H01L21/311;(IPC1-7):H01L21/304 主分类号 C11D7/08
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