发明名称 Method and apparatus of generating PDMAT precursor
摘要 A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
申请公布号 US2004014320(A1) 申请公布日期 2004.01.22
申请号 US20030447255 申请日期 2003.05.27
申请人 发明人 CHEN LING;KU VINCENT W.;CHUNG HUA;MARCADAL CHRISTOPHE;GANGULI SESHADRI;LIN JENNY;WU DIEN-YEH;OUYE ALAN;CHANG MEI
分类号 C23C16/18;C23C16/34;C23C16/44;C23C16/448;C23C16/455;H01L21/31;(IPC1-7):B01J10/00;B01J10/02;B01J12/00;B01J12/02;B01J14/00;B01J15/00;B01J16/00;B01J19/00;B32B27/04;B32B27/12;H01L21/302;H01L21/461;B32B5/02 主分类号 C23C16/18
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