发明名称 |
Method and apparatus of generating PDMAT precursor |
摘要 |
A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
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申请公布号 |
US2004014320(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
US20030447255 |
申请日期 |
2003.05.27 |
申请人 |
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发明人 |
CHEN LING;KU VINCENT W.;CHUNG HUA;MARCADAL CHRISTOPHE;GANGULI SESHADRI;LIN JENNY;WU DIEN-YEH;OUYE ALAN;CHANG MEI |
分类号 |
C23C16/18;C23C16/34;C23C16/44;C23C16/448;C23C16/455;H01L21/31;(IPC1-7):B01J10/00;B01J10/02;B01J12/00;B01J12/02;B01J14/00;B01J15/00;B01J16/00;B01J19/00;B32B27/04;B32B27/12;H01L21/302;H01L21/461;B32B5/02 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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