发明名称 SEMICONDUCTOR DEVICE AND ITS FABRICATING PROCESS
摘要 PROBLEM TO BE SOLVED: To control the polarity of a zinc oxide based thin film formed on a substrate simply and easily. SOLUTION: Polarity of a ZnO substrate 1 is judged. When a ZnO thin film having zinc polarity is desired, a ZnO thin film 2 is formed on the zinc polarity plane 1a of the ZnO substrate 1. When the ZnO thin film having oxygen polarity is desired, the ZnO thin film is formed on the oxygen polarity plane 1b of the ZnO substrate 1. A desired ZnO thin film having properties dependent on the polarity can thereby be attained simply and easily. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004022626(A) 申请公布日期 2004.01.22
申请号 JP20020172302 申请日期 2002.06.13
申请人 MURATA MFG CO LTD 发明人 ITO YOSHIHIRO;KADOTA MICHIO;SAIJO SHIN
分类号 H01L21/36;H01L21/363;H01L29/22;(IPC1-7):H01L29/22 主分类号 H01L21/36
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