发明名称 METHOD OF FORMING FILM AND FILM FORMING APPARATUS
摘要 <p>A method of forming a metal oxide film from an organometallic compound as a raw material, characterized in that it comprises the steps of feeding activated oxygen gas through a first flow channel to a treating container and simultaneously with this step or after or during the step, feeding an organometallic gas through a second flow channel to the treating container. Thus, the content of impurities such as residual carbon can be lowered, thereby enabling obtaining a metal oxide film of high quality.</p>
申请公布号 WO2004008516(A1) 申请公布日期 2004.01.22
申请号 WO2003JP08804 申请日期 2003.07.10
申请人 TOKYO ELECTRON LIMITED;YAMASAKI, HIDEAKI;TADA, YOSHIHIDE;ARIMA, SUSUMU;MATSUZAWA, KOUMEI;NAKAMURA, KAZUHITO;KAWANO, YUMIKO 发明人 YAMASAKI, HIDEAKI;TADA, YOSHIHIDE;ARIMA, SUSUMU;MATSUZAWA, KOUMEI;NAKAMURA, KAZUHITO;KAWANO, YUMIKO
分类号 C23C16/18;C23C16/40;C23C16/452;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 C23C16/18
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