<p>A method of forming a metal oxide film from an organometallic compound as a raw material, characterized in that it comprises the steps of feeding activated oxygen gas through a first flow channel to a treating container and simultaneously with this step or after or during the step, feeding an organometallic gas through a second flow channel to the treating container. Thus, the content of impurities such as residual carbon can be lowered, thereby enabling obtaining a metal oxide film of high quality.</p>
申请公布号
WO2004008516(A1)
申请公布日期
2004.01.22
申请号
WO2003JP08804
申请日期
2003.07.10
申请人
TOKYO ELECTRON LIMITED;YAMASAKI, HIDEAKI;TADA, YOSHIHIDE;ARIMA, SUSUMU;MATSUZAWA, KOUMEI;NAKAMURA, KAZUHITO;KAWANO, YUMIKO