| 摘要 |
PROBLEM TO BE SOLVED: To maintain a high magnetic resistance change rate as well as a high input impedance and achieve reduced power consumption even when a magnetoresistive semiconductor element is made small. SOLUTION: The magnetoresistive semiconductor element is provided with a semiconductor operation layer 12 on a substrate 11 and having one set of input-output electrode 13 and a plurality of short-circuiting electrodes 14 on the semiconductor operation layer 12. A part whereat the cross-sectional configuration of the short-circuiting electrode 14 in contact with the semiconductor operation layer 12 has a reversely projected configuration 14a and the sectional configuration of the short-circuiting electrode 14 is T-shaped. In the magnetoresistive element whose resistance is changes by vertically impressing a magnetic field on the surface of the element, the width of the short-circuiting electrode 14 contacted with the semiconductor operation layer 12 is specified so as to be 3μm or less to miniaturize the element, while the sectional configuration of the short-circuiting electrode 14 is specified so as to have the T-shape to sufficiently reduce the resistance of the short-circuit electrode and maintain the high magnetic resistance changing rate of the element. COPYRIGHT: (C)2004,JPO
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