| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which is formed of superior crystals and equipped with a substrate having no dry spot. SOLUTION: A wide-band gap semiconductor is formed on the Si substrate through the intermediary of a buffer layer to form the Schottky barrier diode, and the buffer layer is a cubic boron phosphide layer. The wide-band gap semiconductor is formed of n-type 3C-SiC or GaN. The Si substrate is formed of low-resistance (100) single crystal silicon. The Si substrate is used as a substrate. The substrate and the wide-band gap semiconductor compose a Schottky junction, using Ni. COPYRIGHT: (C)2004,JPO |
