| 摘要 |
A patterning of a first poly-silicon (4) is processed, to divide the first poly-silicon into each memory element and expose silicon substrate (1) portions which comprise boundary. A second poly-silicon (4') is formed on silicon substrate (1) And, a first N+ impurity diffusing region (14) is formed by diffusing impurity, which is included in the second poly-silicon (4'), into the silicon substrate (1) at the boundary portion with heat-treatment. After this, using the first poly-silicon and the second poly-silicon as a material of a floating gate, forming a material of an intermediate insulating film (5) on this material, and forming a material of a control gate on this material, a control gate and a floating gate are formed by etching these materials. Finally, a second impurity diffusing region, is formed in the silicon substrate (1), and this second impurity diffusing region (12') is connected with the first impurity diffusing region (14).
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