| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing drop of the breakdown voltage between the emitter and the collector, and suppressing drop and variation of a current gain hFE. SOLUTION: In an region for forming elements, the surface of a N<SP>-</SP>epitaxial layer 2 slopes upward from an end of a field oxide film 3 to a sidewall of an opening 25. An external base diffused layer 8, formed on the N<SP>-</SP>epitaxial layer 2, slopes upward from a side of the field oxide film 3 to the sidewall of the opening 25, which is exposed. The sidewall of the opening 25, where the external base diffused layer 8 is exposed, is tapered. The lower end of the opening 25 of the external base diffused layer 8 is at about the same deep position as the bottom of the opening 25 or at a position shallower than the bottom. COPYRIGHT: (C)2004,JPO
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