发明名称 |
Deposition method of dielectric layer |
摘要 |
<p>Provided is a method for depositing a dielectric layer (13) on a substrate (11). Oxidation barrier layers (10) for preventing the oxidation and diffusion of a lower electrode are inserted into the interfaces between the substrate (11) and a dielectric layer (13) and between the dielectric layers (13, 15, 17). Accordingly, a capacitor having a low leakage current and a high capacitance is obtained. In addition, a dielectric constant is controlled by adjusting a lattice constant so that a multi-layer structure of high dielectric constant is formed on a large substrate. <IMAGE></p> |
申请公布号 |
EP1383162(A2) |
申请公布日期 |
2004.01.21 |
申请号 |
EP20020257887 |
申请日期 |
2002.11.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUNG-HYUN;CHO, YOUNG-JIN;MIN, YO-SEP |
分类号 |
H01L21/205;H01L21/02;H01L21/28;H01L21/316;H01L21/8242;H01L27/108;H01L29/51;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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