发明名称 |
Method of fabricating a semiconductor device |
摘要 |
<p>A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410 DEG C or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means. <IMAGE></p> |
申请公布号 |
EP1383165(A2) |
申请公布日期 |
2004.01.21 |
申请号 |
EP20030015816 |
申请日期 |
2003.07.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAYAMA, TORU;MARUYAMA, JUNYA;GOTO, YUUGO;OHNO, YUMIKO;TSURUME, TAKUYA;KUWABARA, HIDEAKI |
分类号 |
H01L27/12;H01L29/786;H01L21/762;H01L21/77;H01L21/84;(IPC1-7):H01L21/336;H01L29/49;H01L29/423 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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