发明名称 |
Insulating cap layer and conductive cap layer for semiconductor devices with magnetic material layers |
摘要 |
A semiconductor device (100) and method of fabrication thereof, wherein a plurality of first conductive lines (116) are formed in a dielectric layer (112) over a substrate (110), and an insulating cap layer (140) is disposed over the first conductive lines (116) and exposed portions of the dielectric layer (112). The insulating cap layer (140) is patterned and etched to expose stack portions of the first conductive lines (116). A conductive cap layer (144) is deposited over the exposed portions of the first conductive lines (116). A magnetic material stack (118) is disposed over the insulating cap layer (140), and the magnetic material stack is etched to form magnetic stacks. The insulating cap layer (140) and conductive cap layer (144) protect the underlying first conductive line (116) material during the etching processes.
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申请公布号 |
US6680500(B1) |
申请公布日期 |
2004.01.20 |
申请号 |
US20020210742 |
申请日期 |
2002.07.31 |
申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LOW KIA-SENG;HUMMEL JOHN P.;KASKO IGOR;COSTRINI GREGORY |
分类号 |
H01L21/768;H01L27/22;H01L43/08;H01L43/12;(IPC1-7):H01L29/82;H01L29/96 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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