发明名称 |
Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter |
摘要 |
A method of forming a crystalline semiconductor thin film on a base material which can be prepared at a low temperature by simple step and device, the method including a processing step of applying UV-rays to an amorphous semiconductor thin film provided on a base material while keeping a temperature at not less than 25° C. and not more than 300° C. in a vacuum or a reducing gas atmosphere, as well as a substrate having the semiconductor thin film provided on the base material, a substrate for forming a color filter and a color filter using the substrate.
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申请公布号 |
US6680242(B2) |
申请公布日期 |
2004.01.20 |
申请号 |
US20010977947 |
申请日期 |
2001.10.17 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
OHTSU SHIGEMI;SHIMIZU KEISHI;YATSUDA KAZUTOSHI;AKUTSU EIICHI |
分类号 |
G02B5/20;C23C14/08;C23C14/34;C23C14/58;G02B1/10;H01L21/20;(IPC1-7):H01L21/20;H01L21/26;H01L21/336 |
主分类号 |
G02B5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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