发明名称 |
Apparatus for producing a semiconductor thin film |
摘要 |
In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not smaller than 70% with respect to the laser beam. An absorbing substrate is arranged at a position before the laser beam is irradiated onto the mask. The absorbing substrate is for locally absorbing the laser beam and is for absorbing a reflected beam which is reflected by the reflecting surface of the mask when the laser beam is irradiated onto the reflecting surface of the mask.
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申请公布号 |
US6680460(B1) |
申请公布日期 |
2004.01.20 |
申请号 |
US20000639471 |
申请日期 |
2000.08.16 |
申请人 |
NEC CORPORATION;SUMITOMO HEAVY INDUSTRIES, LTD. |
发明人 |
TAKAOKA HIROMICHI;AKASHI TOMOYUKI |
分类号 |
H01L21/20;B23K26/06;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):B23K26/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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