发明名称 Apparatus for producing a semiconductor thin film
摘要 In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not smaller than 70% with respect to the laser beam. An absorbing substrate is arranged at a position before the laser beam is irradiated onto the mask. The absorbing substrate is for locally absorbing the laser beam and is for absorbing a reflected beam which is reflected by the reflecting surface of the mask when the laser beam is irradiated onto the reflecting surface of the mask.
申请公布号 US6680460(B1) 申请公布日期 2004.01.20
申请号 US20000639471 申请日期 2000.08.16
申请人 NEC CORPORATION;SUMITOMO HEAVY INDUSTRIES, LTD. 发明人 TAKAOKA HIROMICHI;AKASHI TOMOYUKI
分类号 H01L21/20;B23K26/06;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):B23K26/06 主分类号 H01L21/20
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