发明名称 FILM DEPOSITION APPARATUS HAVING DUAL MAGNETRON SPUTTERING SYSTEM AND ION BEAM SOURCE WHICH IS SYNCHRONIZED
摘要 PURPOSE: A film deposition apparatus having dual magnetron sputtering system and ion beam source which is synchronized is provided to control characteristics of thin film efficiently by improving magnetic field arrangement and ion beam power supply method in a dual magnetron sputtering system. CONSTITUTION: The apparatus comprises a vacuum chamber; a substrate(10) arranged inside the vacuum chamber; first magnetron sputtering source(20) which is arranged inside the vacuum chamber and supplies first material to be deposited on the surface of the substrate; second magnetron sputtering source(30) which is arranged inside the vacuum chamber, supplies second material to be deposited on the surface of the substrate and forms dual magnetron sputtering sources along with the first magnetron sputtering source; an ion beam source(50) which is arranged inside the chamber so that ion beam(52) is supplied onto the substrate at a position between supply position of first material supplied to the substrate by the first magnetron sputtering source and supply position of second material supplied to the substrate by the second magnetron sputtering source so as to control surface characteristics of thin film deposited on the surface of the substrate; a bipolar pulse power supply part comprising first power supply part for supplying a pulse power supply to the first magnetron sputtering source and second power supply part for supplying a pulse power supply to the second magnetron sputtering source; and an ion beam power supply part for supplying a power supply to the ion beam source and supplying a synchronized pulse to the bipolar pulse power supply part.
申请公布号 KR20040005406(A) 申请公布日期 2004.01.16
申请号 KR20020039953 申请日期 2002.07.10
申请人 ITM INC. 发明人 CHO, SANG MU;JUNG, HUI SEOP;SEO, YONG UN
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
代理机构 代理人
主权项
地址