METHOD FOR FABRICATING BORDERLESS CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a borderless contact hole of a semiconductor device is provided to prevent an operation characteristic of a transistor from being deteriorated by a silicon surface damaged by over-etching and avoid damage to an isolation region by interposing a silicon nitride layer functioning as an etch stop layer in the isolation region when the borderless contact hole is simultaneously formed in an active region and the isolation region. CONSTITUTION: A substrate is prepared in which the active region and the isolation region are defined. A trench(201) and an isolation layer(212) for filling the trench are respectively formed in the isolation region of the substrate. A transistor including a gate and a source/drain is formed on the substrate including the isolation layer. A silicon nitride layer and an interlayer dielectric are sequentially formed on the resultant structure. The interlayer dielectric and the silicon nitride layer are selectively etched by a photolithography process to form the borderless contact hole simultaneously exposing a portion of the isolation region and a portion of the active region.