TRANSPARENT CONDUCTIVE FILM AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a transparent conductive film having low resistance with excellent moisture resistance and heat resistance and to provide its forming method. SOLUTION: In this forming method of a transparent conductive film, the transparent conductive film is formed by exposing a base material to a gas brought into a plasma state by introducing it into a discharge space at the atmospheric pressure or at pressure close to the atmospheric pressure. The formation method of the transparent conductive film is characterized by that an electric field applied to the discharge space is a high-frequency voltage exceeding 100 kHz; discharge output density is 1 W/cm2or above; the gas contains a thin film formation gas and a reactive gas; the reactive gas contains a reducing gas; and the temperature of the base material is 200-400°C. COPYRIGHT: (C)2004,JPO