| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer interconnection structure which is reduced in line-to-line capacitance between identical wiring layers and between multilayer interconnection layers. SOLUTION: The multilayer interconnection structure comprises a substrate 11, first wiring layer 12 formed on the substrate 11, liner insulating film 22 which is formed on the substrate 11 so as to cover the first wiring layer 12 and has a recess 22b between the first wiring layers 12 contiguous to each other, embedded insulating film 24 formed in the recess 22b, cap insulating film 26 covering the buried insulating film 24, and second wiring layer 14 formed on the cap insulating film 26. The embedded insulating film 24 is formed of an insulating material having a dielectric constant lower than those of the liner insulating film 22 and the cap insulating film 26. COPYRIGHT: (C)2004,JPO
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