| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve adhesion with a plug formed in a layer insulating film and with a capacitor formed on the layer insulating film. <P>SOLUTION: On a semiconductor wafer 100, a layer insulating film 106 is formed to cover a transistor composed of a pair of impartly diffusion layers 102, a gate insulating film 103, and a gate electrode 104. On the layer insulating film 106, an adhesion layer 107 composed of non-oriented titanium-oxide aluminum is formed. On the adhesion layer 107, the capacitor composed of a lower electrode 110, a capacitance insulating film 111 and an upper electrode 112 are formed through a first conductive barrier layer 108 and a second conductive barrier layer 109. The transistor and the capacitor are connected by a conductive plug 113 buried in the layer insulating film 106 and the adhesion layer 107. <P>COPYRIGHT: (C)2004,JPO |
