| 摘要 |
PROBLEM TO BE SOLVED: To make it difficult to deposit a decomposed product of a raw material on a rectification plane of a rectification part, and to form a film having a substantially uniform thickness and physical properties on the substrate. SOLUTION: A thin film vapor phase growing device 16 comprises a rotary susceptor 4 which mounts a wafer 3 to a peripheral part thereof, a rectification panel 8 provided in a center part of this rotary susceptor 4, and a gas supply part 18 for leading a reactive gas 10 to this rectification panel 8. An opposite plane of the rectification panel 8 opposing a gas leading port 20 of the gas supply part 18 substantially comprises an oblique part 12 which is contiguous to a side of the peripheral part in the overall periphery and is oblique in a curved or straight manner, and the oblique part 12 is extended to the peripheral part in an oblique state. COPYRIGHT: (C)2004,JPO
|
