| 摘要 |
PROBLEM TO BE SOLVED: To provide a three-dimensional magnetic sensor having the structure suitable for the miniaturization and the mass production and to provide a method for manufacturing the same. SOLUTION: The upper surface of a support substrate 100 having the major surface of silicon (100) face is treated with an anisotropic etching treatment, and a trench G like a truncated regular quadrangular pyramid having the sides corresponding to a silicon (111) face is formed. After an oxide film is formed on the surface thereof, three anisotropic magnetoresistive elements M11, M12, and M13 are formed on the bevels of the trench G by a semiconductor planar process, and a required wiring layer is formed. Each of the elements M11, M12, and M13 outputs, as an electric signal, magnetic components H(i), H(j), and H(k) along the detection axes I, J, and K in a non-orthogonal coordinate system IJK. A coordinate system transformation operation from the IJK coordinate system to an XYZ orthogonal coordinate system is performed, by performing a geometrical operation based on the angle of inclination of the bevels of the trench G, and the magnetic components H(x), H(y), and H(z) in the orthogonal coordinate system are obtained. COPYRIGHT: (C)2004,JPO
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