Pattern formation method

摘要

After forming a resist film from a positive chemically amplified resist material, an insolubilization treatment for making the surface of the resist film insoluble in a developer is carried out. After the insolubilization treatment, pattern exposure is performed by selectively irradiating the resist film with exposing light. Thereafter, the resist film is developed so as to form a resist pattern made of an unexposed portion of the resist film.