发明名称 IMPROVED ERROR CORRECTION SCHEME FOR USE IN FLASH MEMORY ALLOWING BIT ALTERABILITY
摘要 A system (70) comprising a microprocessor (74), a data bus (75) for writing data into a Flash memory device (71) and a data bus (75) for reading data from the Flash memory device (71). The Flash memory device (71) comprises an error correction encoder (72), a Flash memory (71), an error correction decoder (73), and a Flash data bus (75) for interconnecting the error correction encoder (72), the Flash memory (71), and the error correction decoder (73). The data, when being processed by the error correction encoder (72) are converted into a word that comprises a status word (51), a data word (52), and a redundancy word (53). This approach enables error correction with single-bit alterability.
申请公布号 WO02086719(A3) 申请公布日期 2004.01.15
申请号 WO2002IB01332 申请日期 2002.04.12
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 GAPPISCH, STEFFEN;BAGGEN, CONSTANT, P., M., J.;SLENTER, ANDRE, G., J.;GELKE, HANS-JOACHIM
分类号 G06F11/08;G06F11/10;G06F12/16;G11C16/06;G11C29/00;G11C29/42 主分类号 G06F11/08
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