发明名称 ELECTRON SOURCE DEVICE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a low-cost and long-life electron source device with a high electron emission capacity. <P>SOLUTION: The electron source device is provided with a porous insulating layer (for instance, a porous alumina layer) equipped with a number of microholes (nano-holes) arrayed in a vertical direction, a first conductor layer arranged on the face of a opening side of the nano-holes, a conductive layer made inside the nano-holes consisting of a conductor or a semiconductor, and a second conductor layer and a bottom side end part of the nano-holes and the second conductor layer are separated by a barrier layer made of a dielectric. It is so structured that electrons are emitted in a direction contrary to the direction headed from the second conductor layer to the barrier layer by voltage impressed between the first conductor layer and the second conductor layer. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004014406(A) 申请公布日期 2004.01.15
申请号 JP20020168880 申请日期 2002.06.10
申请人 TOSHIBA CORP;FUJI SHIKISO KK 发明人 ITO TAKEO;MATSUDA SHUZO;TANAKA HAJIME;INAMURA MASAAKI;SAKAI KAZUO
分类号 H01J9/02;H01J1/312;H01J29/04;H01J31/12;(IPC1-7):H01J1/312 主分类号 H01J9/02
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