发明名称 |
ELECTRON SOURCE DEVICE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-cost and long-life electron source device with a high electron emission capacity. <P>SOLUTION: The electron source device is provided with a porous insulating layer (for instance, a porous alumina layer) equipped with a number of microholes (nano-holes) arrayed in a vertical direction, a first conductor layer arranged on the face of a opening side of the nano-holes, a conductive layer made inside the nano-holes consisting of a conductor or a semiconductor, and a second conductor layer and a bottom side end part of the nano-holes and the second conductor layer are separated by a barrier layer made of a dielectric. It is so structured that electrons are emitted in a direction contrary to the direction headed from the second conductor layer to the barrier layer by voltage impressed between the first conductor layer and the second conductor layer. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004014406(A) |
申请公布日期 |
2004.01.15 |
申请号 |
JP20020168880 |
申请日期 |
2002.06.10 |
申请人 |
TOSHIBA CORP;FUJI SHIKISO KK |
发明人 |
ITO TAKEO;MATSUDA SHUZO;TANAKA HAJIME;INAMURA MASAAKI;SAKAI KAZUO |
分类号 |
H01J9/02;H01J1/312;H01J29/04;H01J31/12;(IPC1-7):H01J1/312 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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