| 摘要 |
PROBLEM TO BE SOLVED: To provide a MRAM or the like having high speed, high capacity, and mass productivity by dissolving problems of stabilization of reading of data from resistance elements especially magnetoresistive effect elements and dispersion of resistance values of magnetoresistive effect elements or the like caused in mass production. SOLUTION: This device is provided with magnetoresistive effect elements (R11-R14, R21-R24, R31-R34, R41-R44) and first switch elements (T11-T14, T21-T24, T31-T34, T41-T44), fixed resistors (r1-r4) of which a resistance value is fixed and operational amplifiers (G1-G4) are provided at the outside of each memory, one side of terminals of the resistance elements are connected to the first switch elements, controlled by bit lines (B1-B4), and connected electrically to data lines (D1-D2). The data lines are connected to inversion input terminals of the operational amplifier, the fixed resistor r2 is connected to the inversion input terminal and an output terminal of the operational amplifier. COPYRIGHT: (C)2004,JPO
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