发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device comprises a first conductor formed inside or on the top surface of a semiconductor substrate; an insulating film formed on the top surface of said semiconductor substrate or on the top surface of said first conductor; contact holes penetrating said insulating layer to reach said first conductor; a second conductor filled inside said contact holes and electrically connected to said first conductor; and an interconnection extending across contact regions on a top surface region of said insulating layer where said contact holes are formed respectively, and having opposite sides at least one of which is in contact with said second conductor inside said contact regions.
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申请公布号 |
US2004009661(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
US20020237690 |
申请日期 |
2002.09.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKAJIMA MUTSUMI |
分类号 |
H01L21/28;H01L21/768;H01L21/8242;H01L21/8247;H01L23/522;H01L23/532;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/476;H01L21/311;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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