METHOD OF ANNEALING ELECTRICALLY CONDUCTIVE ZINC OXIDE FILMS

摘要

The electrical conductivity of a zinc oxide layer (15) is improved by annealing (15) the layer at a temperature of between about 500°C and about 600°C in an inert atmosphere having sufficient levels of entrained ZnO to permit reduction of oxygen levels in the lattice structure of the zinc oxide layer (15) while maintaining zinc levels in the lattice structure.