发明名称 |
Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates |
摘要 |
A method of fabricating a Si1-XGeX film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si1-XGeX layer on the silicon substrate forming a Si1-XGeX/Si interface there between; amorphizing the Si1-XGeX layer at a temperature greater than Tc to form an amorphous, graded SiGe layer; and annealing the structure at a temperature of between about 650° C. to 1100° C. for between about ten seconds and sixty minutes to recrystallize the SiGe layer.
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申请公布号 |
US2004009626(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
US20020194383 |
申请日期 |
2002.07.11 |
申请人 |
TWEET DOUGLAS J.;HSU SHENG TENG;MAA JER-SHEN;LEE JONG-JAN |
发明人 |
TWEET DOUGLAS J.;HSU SHENG TENG;MAA JER-SHEN;LEE JONG-JAN |
分类号 |
C30B25/02;C30B29/52;C30B31/22;H01L21/20;H01L21/265;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
C30B25/02 |
代理机构 |
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