SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for forming a plurality of types of different gate insulating films within the same silicon substrate by selectively forming a silicon nitride film without damaging and contaminating a silicon substrate surface, and to provide a manufacturing method of the semiconductor device. SOLUTION: A silicon oxide film is formed on the surface of the silicon substrate and is partially removed. A silicon nitride film is formed on a substrate surface where the silicon oxide film is removed, and nitrogen is introduced to the surface of the silicon oxide film that is allowed to remain without any removal. In addition, the silicon oxide film is deposited on the surface of the silicon substrate by a chemical vapor deposition method and is partially removed. The silicon nitride film is formed on the substrate surface where the silicon oxide film is removed and nitrogen is introduced to the surface of the silicon oxide film that is allowed to remain without any removal. The silicon oxide film where the nitrogen is introduced is dissolved and removed for exposing the substrate surface, and the surface of the exposed silicon substrate and the silicon nitride film are oxidized. COPYRIGHT: (C)2004,JPO