SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING SAME

摘要

PROBLEM TO BE SOLVED: To prevent a conductive material from being diffused into an interlayer dielectric being exposed by removing a barrier film when a line for interconnecting the layers of a semiconductor device having a multilayer wiring structure is formed. SOLUTION: The interlayer dielectric being exposed by removing the barrier film is formed of such a material as the conductive material forming the interlayer connecting line or an interconnect layer is not diffused easily. Since the insulating film is formed such that the conductive material is not diffused easily into an area being exposed, the conductive material can be prevented from being diffused into the underlying insulating film and a highly reliable semiconductor device can be fabricated. COPYRIGHT: (C)2004,JPO