| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical organic transistor having a sufficiently high carrier mobility, and to provide its fabricating process. SOLUTION: A gate electrode 2, a gate insulating film 5, a source electrode 3, and a drain electrode 4 are formed on a substrate, and an organic semiconductor layer is interposed between the source electrode 3 and the drain electrode 4. The source electrode 3, the organic semiconductor layer and the drain electrode 4 are formed in a direction perpendicular to the substrate 1 and the gate electrode 2 is located contiguously to the source electrode 3, the drain electrode 4 and the organic semiconductor layer through the gate insulating film 5. In such a vertical organic transistor, a film 7 for controlling the orientation of molecules 6" in the organic semiconductor layer is formed at least partially on the surface of the source electrode 3, the drain electrode 4 and the organic semiconductor layer facing the organic semiconductor layer. COPYRIGHT: (C)2004,JPO
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