| 摘要 |
PROBLEM TO BE SOLVED: To provide a measuring method of current density distribution of ion beam in which the ion injection quantity can be nearly uniformed throughout the whole face of a semiconductor board when carrying out ion injection on the semiconductor board, and an ion injection method using this measuring method, and an ion injection device. SOLUTION: A secondary-electron detecting sensor for detecting the secondary electrons is provided on an ion injection device. By irradiating ion beam on the semiconductor board, the secondary electrons emitted from the semiconductor board are detected by the secondary-electron detectingsensor, and based on the detected quantity of the secondary electrons, the current density distribution of the ion beam irradiated is measured. Then, based on the detected quantity of the secondary electrons detected by the secondary-electron detecting sensor, irradiation control of the ion beam is carried out, and at the same time, ion injection into the semiconductor board by ion beam is carried out. The irradiation control of the ion beam is made by scan speed control of ion beam. COPYRIGHT: (C)2004,JPO
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