发明名称 Polymers, resist materials, and pattern formation method
摘要 An object of the present invention is to provide a polymer which has excellent reactivity, rigidity and adhesion to the substrate, and undergoes a low degree of swelling during development, a resist material which uses this polymer as the base resin and hence exhibits much higher resolving power and etching resistance than conventional resist materials, and a pattern formation method using this resist material. Specifically, the present invention provides a novel polymer containing repeating units represented by the following general formula (1-1) or (1-2) and having a weight-average molecular weight of 1,000 to 500,000, a resist material using the polymer as a base resin, and a pattern formation method using the resist material.
申请公布号 US6677101(B2) 申请公布日期 2004.01.13
申请号 US20020050478 申请日期 2002.01.16
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;HASEGAWA KOJI;NAKASHIMA MUTSUO
分类号 C08G61/06;G03F7/039;(IPC1-7):G03F7/039 主分类号 C08G61/06
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